Mike Leszczynski

Affiliation:

Polish Academy of Sciences, Institute of High Pressure Physics

Participant:

E-MRS Fall Meeting 2002

Participant:

E-MRS Fall Meeting 2009

Publications:

1. Blue laser diodes manufacturing in Poland
2. Bowing of epitaxial structures grown on bulk GaN substrates
3. Built-in electric fields in group III-nitride light emitting quantum structures
4. Efficiency „droop” in nitride light emitters
5. Inhomogeneities of InGaN/GaN MOVPE multi quantum wells grown with two temperatures process studied by transmission electron microscopy.
6. Microstructure of homoepitaxially grown InGaN/GaN, violet light emitting laser diodes.
7. Nitrides lasers after BluRay
8. PLASTIC PROPERTIES OF GaN AND Al_2O_3 CRYSTAL: FEM-SIMULATION OF NANOINDENTATION CONFIRMED BY HIGH-RESOLUTION MICROSCOPY
9. Polymer film-coated high electron mobility transistors, based on GaN heterostructures, as sensors for some benzene derivatives

10. Rietveld refinement for polycrystalline indium nitride

11. Surface morphology of InGaN layers
12. The Blue Laser
13. The optimalisation of the GaN and GaN/AlGaN heterojunctions on bulk crystals using plasma-assisted molecular beam epitaxy
14. X-ray Diffraction as a Tool of InGaN layer Characterization.