Mike Leszczynski

e-mail:
phone: +4(0) 602391349
fax: +48 (22) 632421
web:
interest(s):

Affiliation:


Polish Academy of Sciences, Institute of High Pressure Physics

address: Sokolowska 29/37, Warszawa, 01-142, Poland
phone: +48-22-6324302
fax: +48-22-6324218
web: http://www.unipress.waw.pl

Participant:


E-MRS Fall Meeting 2002

began: 2002-09-15
ended: 2002-09-19
Presented:

Participant:


E-MRS Fall Meeting 2009

began: 2010-09-14
ended: 2010-09-18
Presented:

E-MRS Fall Meeting 2009

Nitrides lasers after BluRay

E-MRS Fall Meeting 2009

Surface morphology of InGaN layers

Publications:


  1. Blue laser diodes manufacturing in Poland
  2. Bowing of epitaxial structures grown on bulk GaN substrates
  3. Built-in electric fields in group III-nitride light emitting quantum structures
  4. Efficiency „droop” in nitride light emitters
  5. Inhomogeneities of InGaN/GaN MOVPE multi quantum wells grown with two temperatures process studied by transmission electron microscopy.
  6. Microstructure of homoepitaxially grown InGaN/GaN, violet light emitting laser diodes.
  7. Nitrides lasers after BluRay
  8. PLASTIC PROPERTIES OF GaN AND Al_2O_3 CRYSTAL: FEM-SIMULATION OF NANOINDENTATION CONFIRMED BY HIGH-RESOLUTION MICROSCOPY
  9. Polymer film-coated high electron mobility transistors, based on GaN heterostructures, as sensors for some benzene derivatives
  10. Rietveld refinement for polycrystalline indium nitride

  11. Surface morphology of InGaN layers
  12. The Blue Laser
  13. The optimalisation of the GaN and GaN/AlGaN heterojunctions on bulk crystals using plasma-assisted molecular beam epitaxy
  14. X-ray Diffraction as a Tool of InGaN layer Characterization.



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