Indium nitride is an attractive semiconductor material for optoelectronic applications. It is a potential material for high-speed electronics and solar cells. The structural data of the bulk material provide a necessary basis in development of such devices. In the present work, the structural information on indium nitride is obtained from high-quality powder diffraction patterns collected at a laboratory diffractometer. Polycrystalline InN powders studied in this paper were prepared from high-purity components. Powder diffraction data were collected at a laboratory Bragg-Brentano diffractometer equipped with a copper X-ray tube, a focusing incident-beam monochromator and a semiconductor strip detector. The applied instrument, described in more detail in Ref. [1], allows for acquiring the data with excellent statistics and resolution. During sample mounting, efforts were made for reduction of possible preferred orientation effects. The applied structure models include minor-impurity phases. Rietveld refinements were performed using the Fullprof.2k (v. 2.70) program [2]. Values of refined lattice parameters and the free positional parameter of nitrogen are consistent with earlier literature data. The present data complete the recent refinements for AlN and GaN [3].
References
[1] W. Paszkowicz, in: Nucl. Instrum. Meth. A, (2005) accepted.
[2] J. Rodriguez-Carvajal, Newslett. IUCr Commission Powd. Diffr. 26 (2001) 12
[3] W. Paszkowicz, S. Podsiadło, R. Minikayev, J. Alloys Compd. 382 (2004) 100-106

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