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dr Jolanta Borysiuk
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Affiliation:
Polish Academy of Sciences, Institute of Physics
address:
al. Lotników 32/46, Warszawa, 02-668,
Poland
phone:
+48-22-8436601
fax:
+48-22-8430926
web:
http://www.ifpan.edu.pl
Affiliation:
Instytut Fizyki PAN
address:
Al. Lotnikow 32/46, Warszawa, 02668,
Poland
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Participant:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
began:
2013-08-11
ended:
2013-08-16
Presented:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy
Publications:
An influence of parallel electric field on the dispersion relation of graphene – a new route to Dirac logics
Growth and properties of inclined GaN nanowires on Si(001) substrates by PAMBE
Impact of substrate microstructure on self-induced nucleation and properties of GaN nanowires grown by plasma-assisted MBE
Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy
Surface structure and diffusion of Si and C adatoms on bare SiC(0001) and SiC(0001) surfaces- density functional theory studies
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