Growth of GaN layers on silicon and sintered GaN nano-ceramic substrates – TEM investigations

Jolanta Borysiuk 1Piotr Caban 1Wlodek Strupinski 1Stanisław Gierlotka 2Svitlana Stelmakh 2Jerzy F. Janik 3

1. Institute of Electronic Materials Technology (ITME), Wólczyńska 133, Warszawa 01-919, Poland
2. Polish Academy of Sciences, Institute of High Pressure Physics (UNIPRESS), Sokolowska 29/37, Warszawa 01-142, Poland
3. AGH University of Science and Technology (AGH), al. Mickiewicza 30, Kraków 30-059, Poland


Heteroepitaxial GaN layers have been grown on many foreign substrates such as sapphire, silicon carbide or silicon. Therein, a common feature is that the GaN epitaxy proceeds via several stages, i.e., nitridation, growth of the low temperature buffer layer, annealing, and, finally, growth of the layer with the reduced density of dislocations.

The mechanism of the GaN growth has also been investigated. Despite many efforts, the microscopic mechanism of island creation, dominant growth of selected grains, their coalescence, and the strain reduction via creation of dislocations have been only partially elucidated.

Recently, alternative GaN nano-ceramic substrates were developed [1, 2]. They offer a unique possibility to investigate the growth of GaN layers originated on various crystallographic orientations in nano-scale which is the subject of the reported transmission electron microscopic (TEM) study. For comparison, GaN layers on silicon were also investigated by this technique.

It is shown that the MOCVD growth of GaN layers on the GaN nano-ceramic substrates is highly anisotropic. The disorientation of the grains in the layer is much higher causing larger strains as compared to the GaN layer on the silicon substrate. In consequence, the flat growth front can be attained with higher difficulty. However, an appropriately thick GaN layer can, eventually, develop flat surfaces suitable for construction of optoelectronic structures. This can be achieved at the cost of creation of the relatively large density of dislocations and stacking faults.

We want to acknowledge a generous support of the Polish Committee for Scientific Research KBN, Grant 3 T08D 043 26

[1] E. Grzanka, S. Stelmakh, S. Gierlotka, A. Swiderska-Sroda, G. Kalisz, B. Palosz, M. Drygas, J. F. Janik, R. T. Paine: "In situ X-ray diffraction studies of distribution of strain during simultaneous sintering of nanocrystalline GaN powders under high-pressure high-temperature conditions"; EPDIC-10, September 1-4, 2006; Geneve, Switzerland.

[2] S. Stelmakh, A. Swiderska-Sroda, G. Kalisz, S. Gierlotka, E. Grzanka, B. Palosz, M. Drygas, J. F. Janik, R. T. Paine: "Microstructure and mechanical properties of GaN nanoceramics sintered under high-pressure high-temperature conditions"; International Conference on Nanoscience and Technology 2006 (ICN+T 2006); July 30-August 4, 2006; Basel, Switzerland.

Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: must be provided.


Related papers
  1. Analysis of density waves in CdSe, SiC, and diamond nanocrystals by application of NanoPDF software package to experimental Pair Distribution Functions.
  2. Crystallite size determination from diffraction data: a do-it-yourself tutorial.  
  3. Diamond-tungsten carbide nanocomposite
  4. The influence of pressure on growth of 3C-SiC heteroepitaxial layers on silicon substrates
  5. CVD of graphene on SiC
  6. Modeling of heat and mass transfer in GaN MOVPE reactor
  7. Impact of internal electric fields for GaInN/GaN quantum wells in light emitting diodes
  8. Pinned and unpinned epitaxial and sublimated graphene on SiC
  9. High-pressure diffraction study of structural and elastic properties of zircon-type and scheelite-type RVO4 (R = Nd, Eu)
  10. Topographic and reflectometric investigation of 4H silicon carbide epitaxial layer deposited at various growth rates
  11. Synthesis of gallium nitride nanowires by Sublimation Sandwich Method
  12. Looking at the real structure of nanocrystals with powder diffraction: the apparent lattice parameter approach
  13. Looking beyond limitations of diffraction methods of structural analysis of nanocrystalline materials
  14. Raman spectroscopy of single and multilayer graphene on SiC substrates
  15. Study of synthesis and formation mechanisms of nanometric magnesium alumina spinel powders
  16. Structure and magnetic properties of carbon encapsulated Fe nanoparticles obtained by arc plasma synthesis
  17. Growth of high resistivity GaN layers by compensating defects generation
  18. MOCVD growth and characterization of ultrathin AlN/GaN superlattices on 0001 sapphire substrates
  19. Growth and properties of ytterbium doped KY(WO4)2 nanocomposites
  20. Dyfraktometryczna analiza mikro- i makro-naprężeń w spiekach i kompozytach otrzymanych pod wysokim ciśnieniem i wysoką temperaturą.
  21. Badania własności termicznych nanokryształów metodami dyfraktometrycznymi
  22. Fabrication and micro-structure characterization of Al2O3/Ni-P composites with interpenetrating phases
  23. Nanocrystalline SiC compacts obtained by sintering of laser synthesized nanopowders under extreme pressures
  24. High-pressure Induced Structural Decomposition of RE-doped YAG Nanoceramics
  25. Sintering of nanopowders under high pressure
  26. Synthesis and properties of GaAs nano-composites
  27. SiC-Zn nanocomposites obtained using high-pressure infiltration technique
  28. Sintering temperature effect on structure and properties of Al2O3/Ni-P composites with interpenetrating phases
  29. Structural and luminescence properties of yttrium-aluminum garnet (YAG) nanoceramics
  30. Electrical Properties of GaN/AlGaN Hetrostructures
  31. Fabrication and electrical properties of Eu3+:BaTiO3 nanoceramics for SOFC
  32. GaN growth by Sublimation Sandwich Method
  33. X-ray diffraction studies of thermal properties of bulk- and surface-atoms of nanocrystalline SiC
  34. Characterization of nanostructured hydroxyapatite ceramics densified at high-pressure and temperature
  35. Powder precursors for nanoceramics: cleaning and compaction
  36. Examination of the atomic Pair Distribution Function (PDF) of SiC nanocrystals by in-situ high pressure diffraction
  37. Investigation of the microstructure of SiC-Zn nanocomposites by microscopic methods: SEM, AFM and TEM
  38. Sythesis of metal-ceramic nanocomposites by high-pressure infiltration
  39. X-Ray investigations of the natural and artificial White Etching Layer
  40. Mg diffusion in GaN:Mg grown by metalorganic vapor-phase epitaxy MOVPE
  41. Optical investigations of two dimensional electron gas in the AlGaN/GaN heterostructures
  42. Problems with cracking of AlxGa1-xN layers
  43. The influence of temperature and pressure on possibility of obtaining Al2O3/Ni-P nanocomposite through hot pressing process.
  44. X-Ray Characterization of Nanostructured Materials
  45. Generetion and Relaxation of Strain in SiC and GaN under Extreme Pressure
  46. Influence of high pressure on the polytype structure of nanocrystalline GaN
  47. Transformation of fractal microstructure of nanocrystalline SiC and diamond in high pressures - Small Angle Scattering Study
  48. Synthesis of Nanocomposites Based on Superhard Ceramic Nanopowders

Presentation: Poster at Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth, by Jolanta Borysiuk
See On-line Journal of Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Submitted: 2007-02-14 15:33
Revised:   2009-06-07 00:44
© 1998-2021 pielaszek research, all rights reserved Powered by the Conference Engine