Impact of internal electric fields for GaInN/GaN quantum wells in light emitting diodes
|Johannes Binder 1, Krzysztof P. Korona 1, Jolanta Borysiuk 1, Andrzej Wysmolek 1, Martina Baeumler 2, Klaus Köhler 2, Lutz Kirste 2|
1. University of Warsaw, Institute of Experimental Physics (IFDUW), Hoża 69, Warsaw 00-681, Poland
GaN based structures are playing an important role in illumination technology, since they are widely used in light emitting diodes (LEDs). The good efficiency of the LEDs opens up a way towards an energy saving future of illumination. To further improve the performance of such devices a deeper understanding of processes involved in light emission is required.
Presentation: Poster at Warsaw and Karlsruhe Nanotechnology Day, by Johannes Binder
See On-line Journal of Warsaw and Karlsruhe Nanotechnology Day
Submitted: 2011-09-19 17:48 Revised: 2011-09-19 17:48
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