Impact of internal electric fields for GaInN/GaN quantum wells in light emitting diodes

Johannes Binder 1Krzysztof P. Korona 1Jolanta Borysiuk 1Andrzej Wysmolek 1Martina Baeumler 2Klaus Köhler 2Lutz Kirste 2

1. University of Warsaw, Institute of Experimental Physics (IFDUW), Hoża 69, Warsaw 00-681, Poland
2. Fraunhofer-Institute of Applied Solid State Physics, Tullastr. 72, Freiburg 79108, Germany


GaN based structures are playing an important role in illumination technology, since they are widely used in light emitting diodes (LEDs). The good efficiency of the LEDs opens up a way towards an energy saving future of illumination. To further improve the performance of such devices a deeper understanding of processes involved in light emission is required.

In this work we present measurements of three samples containing quantum wells (QWs) of different width. The samples were grown by MOCVD on a sapphire substrate with indium content being about 10%.

The structures were characterised by photoluminescence (PL), electroluminescence (EL) and photocurrent (PC) measurements. The comparison of absorption (measured by PC) and emission (PL and EL) on the same sample revealed a shift in energy with the emission energy being significantly lower. These shifts can be interpreted by the quantum confined Stark effect (QCSE). The effect was more pronounced for wider QWs, as expected from theory.

Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: must be provided.


Related papers
  1. (Cd, Mn)Te Crystals for X and Gamma Radiation Detectors - an Alternative Material to CdTe and (Cd,Zn)Te. 
  2. Growth and properties of inclined GaN nanowires on Si(001) substrates by PAMBE
  3. Safe nanomaterials of spinel structure for lithium-ion secondary batteries 
  4. Optical Characterisation of Bulk ZnO Crystals Grown by CVT
  5. Physical properties of unique ZnO single crystals from Oława Foundry
  6. Pinned and unpinned epitaxial and sublimated graphene on SiC
  7. Synthesis and studies on LiMn2O4/Carbon nanocomposites as a cathode materials for lithium ion batteries
  8. Magnetoplasma and impurity excitations in GaAs studied by resonant Raman scattering in high magnetic fields
  9. Raman spectroscopy of single and multilayer graphene on SiC substrates
  10. Study of synthesis and formation mechanisms of nanometric magnesium alumina spinel powders
  11. Growth of GaN layers on silicon and sintered GaN nano-ceramic substrates – TEM investigations
  12. Structure and magnetic properties of carbon encapsulated Fe nanoparticles obtained by arc plasma synthesis
  13. Growth of high resistivity GaN layers by compensating defects generation
  14. Optical properties of p-type ZnO:(N, As, Sb)
  15. Anomalous behaviour of the photoluminescence from GaN/AlGaN quantum wells
  16. Recombination Dynamics in GaN/AlGaN Low Dimensional Structures Obtained by SiH4 Treatment
  17. Resonant tunneling and intersubband absorption in AlN-GaN-superlattices

Presentation: Poster at Warsaw and Karlsruhe Nanotechnology Day, by Johannes Binder
See On-line Journal of Warsaw and Karlsruhe Nanotechnology Day

Submitted: 2011-09-19 17:48
Revised:   2011-09-19 17:48
© 1998-2022 pielaszek research, all rights reserved Powered by the Conference Engine