Electrical Properties of GaN/AlGaN Hetrostructures

Wlodek Strupinski 1Dariusz Lenkiewicz 1Ewa Dumiszewska 1Marek Wesołowski 1Agata Jasik 1Rafał Jakieła 1,2

1. Institute of Electronic Materials Technology (ITME), Wólczyńska 133, Warszawa 01-919, Poland
2. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland


GaN and AlGaN electrical transport properties were investigated in undoped and intentionally doped layers using Hall measurements. GaN/AlGaN films grown by MOCVD exhibited strong variations in resistivity as a result of changing MOCVD growth conditions in controlled experiments. The explanation of high compensation in GaN is connected to carbon impurity acting as a acceptor, substitutional oxygen predicted to act as donor, association of threading dislocations with charge centers, gallium vacancies and VGa-O complexes (deep acceptors). In our experiments we tried to recognize the most efficient source of n- and p-type carriers in undoped GaN and mechanisms of compensation by impurities and defects creation. The influence of AlGaN defects structure, with various Al content, on GaN electrical properties was examined detailed. Highly resistive and highly conductive GaN films were produced as a result of our investigations. GaN/AlGaN structures were applied for HEMTs and photodetectors.

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Presentation: oral at E-MRS Fall Meeting 2004, Symposium C, by Wlodek Strupinski
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-05-20 15:45
Revised:   2009-06-08 12:55
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