Diffusion of Mn in gallium arsenide.

Rafał Jakieła 2,3Adam Barcz 1,3Elżbieta Wegner 2Andrzej Zagojski 2

1. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
2. Institute of Electronic Materials Technology (ITME), Wólczyńska 133, Warszawa 01-919, Poland
3. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland


The aim of this work is to compare carrier concentration, diffusion coefficient and shape of the manganese atomic profile in GaAs layers treated under different annealing conditions. Diffusion was performed from implanted Mn as well as from external source of Mn. Manganese implanted GaAs, GaAs:Zn and GaAs:Te bulk samples were investigated. Implantation was performed at room temperature to a dose of 1016/cm2 at an energy of 100 keV. The samples, protected with AlN layers, were annealed at 800OC and 900OC with RTA (rapid thermal annealing) method as well as at 900OC and 1000OC in sealed quartz ampoule.

After removing the AlN films the extent of diffusion of the implanted species was characterized using the SIMS (Secondary Ion Mass Spectrometry) technique.

The depth profiles of in-diffused manganese strongly indicate that the diffusion coefficient D is concentration-dependent. In case of quartz ampoule annealing of implanted samples the Mn diffusivity was found larger when GaAs was annealed with arsenic overpressure combined with the AlN cap than that annealed without cap. Over ten times shallower diffusion range in uncovered sample then that in covered with AlN is interpreted in terms of generation of additional vacancies in the Ga sub-lattice. Mn atoms incorporate in Ga sites lowering diffusion coefficient. In case of diffusion from external source into differently doped GaAs, the largest diffusion coefficient was found for GaAs:Zn. This result indicates highest Mn diffusivity in sample with low Fermi level, which provides lowest Ga vacancies concentration. Both results confirm an interstitial diffusion mechanism.

The Boltzmann-Matano analysis was employed to evaluate the concentration–dependent diffusion coefficient of Mn in GaAs.

Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: http://science24.com/paper/3864 must be provided.


Related papers
  1. (Cd, Mn)Te Crystals for X and Gamma Radiation Detectors - an Alternative Material to CdTe and (Cd,Zn)Te. 
  2. Growth of SiC by PVT method with different sources of the cerium impurity, CeO2 or CeSi2
  3. The influence of growth atmosphere on the self-selection of the grains during ZnO crystal growth
  4. Electronic and optical properties – As and As+Sb doped ZnO grown by PA-MBE
  5. Structure of Si:Mn annealed under enhanced stress conditions
  6. Reconstruction of lattice structure of ion-implanted near-surface regions of HgCdTe epitaxial layers
  7. Effect of high pressure annealing on defect structure of GaMnAs
  8. Elecrical and optical studies of undoped GaP grown by LEC method
  9. Effect of stress on structural transformations in GaMnAs
  10. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
  11. Structure and Magnetization of Defect-Associated Sites in Silicon
  12. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
  13. The role of radiation defects in HgCdTe epitaxial growth
  14. Optical properties of p-type ZnO:(N, As, Sb)
  16. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
  17. Transparent Conducting Oxides as Ohmic Contacts for GaSb-based Thermophotovoltaic Cells
  18. Electrical Properties of GaN/AlGaN Hetrostructures
  19. Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
  20. Preparation and characterization of hexagonal MnTe and ZnO layers
  21. p-type conducting ZnO: fabrication and characterisation
  22. Mg diffusion in GaN:Mg grown by metalorganic vapor-phase epitaxy MOVPE
  23. Diffusion and diffusion induced defects in GaN
  24. Study of Long-Term Stability of Ohmic Contacts to GaN
  25. Problems with cracking of AlxGa1-xN layers
  26. Luminescent properties of wide bandgap materials at room temperature
  27. Argon as a Pressure-Transmitting Medium, Loading Diamond Anvil Cell (DAC) vs Phase Diagram

Presentation: poster at E-MRS Fall Meeting 2005, Symposium B, by Rafał Jakieła
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-05-31 07:24
Revised:   2009-06-07 00:44
Web science24.com
© 1998-2022 pielaszek research, all rights reserved Powered by the Conference Engine