Spin transport in semiconductors between magnetic source and drain

Albert Fert 1M. Elsen 1J-M. George 1H. Jaffrès 1R. Mattana 1F. Nguyen Van Dau 1B. Lépine 2A. Guivarch 2G. Jezequel 2

1. Unité Mixte de Physique CNRS/Thales associée à l'Université Paris-Sud, Domaine de Corbeville, Orsay 91404, France
2. Unité PALMS, Université Rennes I, Rennes F34042, France

Abstract

The structure including a semiconductor channel between spin-polarized metallic source and drain is at the basis of several concepts of spin transistor. The operation of this type of device requires a spin polarized current be injected into the semiconductor and the resulting spin accumulation be transformed into a significant electrical output signal (say that ΔI/I must be of the order of unity if ΔI is the current change between two magnetic configurations of the device). For spin injection, a large enough and spin dependent interface resistance (tunnel junction for example) must be introduced between the source (and the drain) and the semiconductor. On the other hand, as we will show, a significant electrical signal (say ΔI/I =~ 1) can be obtained only if the interface resistances are not too high, which gives a well defined window for the choice of the interface resistance. Having a distance between source and drain shorter than the spin diffusion length is necessary but not at al sufficient.
An illustration of the above conditions is given by our experiments of spin injection into GaAs, particularly by what we find for the variation of the output signal as a function of the tunnel resistances at the source/GaAs and GaAs/drain interfaces.

Legal notice
  • Legal notice:

    Copyrighted materials, (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced, stored in or introduced into a retrieval or caching system, or transmitted in any form or by any means (electronic, mechanical, photocopying, recording or otherwise), or for any purpose, without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: http://science24.com/paper/4145 must be provided.

 

Related papers
  1. Giant tunnel magnetoresistance in organic magnetic tunnel junctions: A new insight into molecular spintronics
  2. Magnetoresistance effects in phthalocyanine based magnetic tunnel junctions
  3. Magnetic tunnel junctions grown on organic template for flexible electronics
  4. Ferromagnetic oxide heteroestructures for spin filtering
  5. Spin injection and detection in GaMnAs-based tunnel junctions : Theory and Experiments
  6. High Curie temperature ferromagnetism in self-organized Ge1‑xMnx nano-columns
  7. From Giant magnetoresistance to current-induced magnetic switching and excitations in magnetic structures
  8. Recent Development in Spin Electronics and Perspective
  9. Oxides for spintronics

Presentation: invited oral at E-MRS Fall Meeting 2005, Symposium D, by Albert Fert
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-07-01 07:06
Revised:   2009-06-07 00:44
Google
 
Web science24.com
© 1998-2021 pielaszek research, all rights reserved Powered by the Conference Engine