High tunnel magnetoresistance (TMR) has been achieved using p-type ferromagnetic semiconductor GaMnAs as electrodes of tunnel junctions [1][2]. A large variation of the tunneling current was also reported depending on the orientation of GaMnAs magnetization attributed to the anisotropy of the valence band [3]. I will report on TMR and TAMR observations on various types of GaMnAs-based junctions constituted of different III-V barriers. A TMR of 170% is obtained considering an InGaAs barrier. The TAMR reaches 16% in out of plane experiment. In the framework of the 6x6 transfer matrices approach adapted to the kp theory [4], we have calculated TMR and TAMR in good agreement with our experimental data and those of Saito et al. [5]. The role of key parameters as spin splitting, Fermi level will be discussed.

[1] Tanaka and Higo..Phys. Rev. Lett. 87, 026602 (2001) ; [2] M. Elsen et al., Phys. Rev. B 73, 035303 (2006) ; [3] C. Ruster et al., Phys. Rev. Lett. 94, 027203 (2005) ; [4] T. Dietl et al., Phys. Rev. B 63, 195205 (2001) ; [5] H. Saito et al., Phys. Rev. Lett. 95, 086604 (2005)

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