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Bulk single crystal growth of ErPd2Si2 inter­me­tal­lic compound by a floating zone method

Chongde Cao 1Wolfgang Löser 2Günter Behr 2

1. Northwestern Polytechnical University, Xi'an 710072, China
2. Leibniz-Institute for Solid State and Materials Research, P.O.Box 270116, Dresden D-01171, Germany

Abstract

Bulk single crystals (d = 6 mm, l = 50 mm) of the ErPd2Si2 compound have been successfully grown at a velocity of 10 mm/h by using the floating zone method with optical heating. Fig. 1 shows a cross section of an ErPd2Si2 single crystal. The morphology of a longitudinal section of the initial part grown from the seed shows a rapid grain selection in the early stage of the ErPd2Si2 crystal growth (Fig. 2). X-ray Laue back-scattering analysis indicates that the crystal growth direction is close to [110] orientation with an inclination angle of about 15° against the rod axis. Energy Dispersive X-ray (EDX) analysis revealed that the composition of the ErPd2Si2 single crystal is about 21.8 at% Er, 36.8 at% Pd, and 41.4 at% Si. The melting point of the ErPd2Si2 compound, 1461°C, is determined by differential scanning calorimetry (DSC). The lattice constants of the single crystal, a = 4.104 Å and c = 9.878 Å were measured by X-ray diffraction analysis. Significant anisotropy has been observed in the magnetic susceptibility. The temperature coefficient of electrical resistivity is isotropic, and no feature resulting from magnetic ordering was detected on the electrical resistivity at low temperatures. 

 


 

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Presentation: Poster at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, Topical Session 1, by Wolfgang Löser
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2013-04-13 11:30
Revised:   2013-04-14 12:27