Bulk single crystals (d = 6 mm, l = 50 mm) of the ErPd₂Si₂ compound have been successfully grown at a velocity of 10 mm/h by using the floating zone method with optical heating. Fig. 1 shows a cross section of an ErPd₂Si₂ single crystal. The morphology of a longitudinal section of the initial part grown from the seed shows a rapid grain selection in the early stage of the ErPd₂Si₂ crystal growth (Fig. 2). X-ray Laue back-scattering analysis indicates that the crystal growth direction is close to [110] orientation with an inclination angle of about 15° against the rod axis. Energy Dispersive X-ray (EDX) analysis revealed that the composition of the ErPd₂Si₂ single crystal is about 21.8 at% Er, 36.8 at% Pd, and 41.4 at% Si. The melting point of the ErPd₂Si₂ compound, 1461°C, is determined by differential scanning calorimetry (DSC). The lattice constants of the single crystal, a = 4.104 Å and c = 9.878 Å were measured by X-ray diffraction analysis. Significant anisotropy has been observed in the magnetic susceptibility. The temperature coefficient of electrical resistivity is isotropic, and no feature resulting from magnetic ordering was detected on the electrical resistivity at low temperatures. 

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