Modification of the nanostructure of the amorphised Si near-surface layer

Dorota Klinger 2Elżbieta Łusakowska 2Danuta Żymierska 2Bolesław Kozankiewicz 2Lech Nowicki 1Anna Stonert 1Julian Auleytner 2

1. Soltan Institute for Nuclear Studies, Hoża 69, Warszawa 00-681, Poland
2. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland


As a result of the implantation with a respectively high dose, a near-surface layer of highly disordered structure is created in semi-conducting materials. The implantation of Si with Sn+ ions as well as with the Ge+ ions is examined and compared due to relatively high mass of ions, sharp boundary between the amorphised layer and the crystal matrix. For crystal lattice reconstruction of the disturbed near-surface layer, ultraviolet laser pulse can be used. Evolution of defect structure is characterised by means of Rutherford back-scattering and atomic force microscopy. Nanosecond laser annealing can lead to the recrystalisation of the amorphised near-surface layer and to formation of misfit dislocations on the surface in the melted regions.

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Presentation: poster at E-MRS Fall Meeting 2004, Symposium D, by Dorota Klinger
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-08-06 14:13
Revised:   2009-06-08 12:55
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