Evaluation of the depth extension of the damages induced by FLASH pulses in silicon crystals

Wojciech Wierzchowski 1Krzysztof Wieteska 2Dorota Klinger 3Ryszard Sobierajski 3Jerzy Pelka 3Danuta Zymirska 3Tomasz Balcer 1Carsten Paulmann 4

1. Institute of Electronic Materials Technology (ITME), Wólczyńska 133, Warszawa 01-919, Poland
2. Institute of Atomic Energy POLATOM, Świerk 05-400, Poland
3. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
4. University of Hamburg, Mineralogisch-Pertographisches Institut, Hamburg, Germany


The development of new generation of short radiation sources exploring free electron lasers focussed the interest in the problem of the interaction of the beam generated by these devices with solid matter. The strong excitation of electronic state induced by the beam can here reveal  a number of new phenomena, which are important for practical development of optical elements and design of experiments, but also seems to be very interesting in cognitive aspects. The information about the phenomena requires a very careful structural characterization of the craters especially their geometrical features and the lattice deformation.

In our previous experiment the use of back reflection section and projection topography enabled us to reveal many important features of the strain fields connected with the craters. It was in particular possible to demonstrate a significant similarity of the observed strain field to that of rod-like inclusion. The last results seemed to suggest unexpectedly large depth extension of the strain field connected with the craters.

In the present experiment we performed a successful attempt to confirm this observation by taking the synchrotron transmission section white beam topographs using the beam perpendicular to the surface of the sample. Numerous relatively dense series of section topographs spaced by 10 µm provided a kind of a precise scan allowing the evaluation of geometrical shape and depth extension some various craters offering also the possibility of comparing the images corresponding to the reflection from different crystallographic planes. In the obtained topographic images we observed the direct image connected with the boundary of the crater accompanied by the some deformation of the Kato fringes. The representative transmission section topograph chosen from the large series is shown in fig. 1.


Fig 1  The representative synchrotron topograph, exposed with the beam perpendicular to the sample with FLASH induced craters, chosen from the exposed series to provide the highest extension of their direct images.

The evaluated depth extension was slightly differed for individual craters and was in the range 30 – 100 µm. This value was confirmed also by some evaluations basing on the  vanishing the images of the series of spots in the Bragg case section topographs obtained when the beam entered the crystal at low 4º angle.

The synchrotron investigations were supported by the HASYLAB project II-20060165 EC






Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: http://science24.com/paper/24588 must be provided.


Related papers
  1. New Ca10Li(VO4)7 laser host: growth and properties
  2. Characterization of the defect structure in gadolinium orthovanadate single crystals grown by the Czochralski method
  3. Krótkofalowe lasery na swobodnych elektronach - oddziaływanie impulsów z materią stałą
  4. Topographic and reflectometric investigation of 4H silicon carbide epitaxial layer deposited at various growth rates
  5. Synchrotron topographic studies of domain structure in Czochralski grown PrxLa1-xAlO3 crystals
  6. Damage of gallium arsenide created after irradiation by ultra-short VUV laser pulse
  7. X-ray photoemission from CdTe/PbTe/CdTe nanostructure in normal and grazing-incidence modes
  8. Observation of individual dislocations in 6h and 4h sic by means of back-reflection methods of x-ray diffraction topography
  9. Synchrotron topographic investigation of SiC bulk crystals and epitaxial layers
  10. The investigation of structural perfection and facetting in highly Er - doped Yb3Al5O12 crystals
  11. Observation of defects in g - irradiated Cz-si annealed under high pressure
  12. X-ray topography of Ca0.5Sr0.5NdAlO4 single crystal
  13. Investigation of insulated buried layers obtained by ion implantation in AlGaAs with various Al concentration
  14. Modification of the nanostructure of the amorphised Si near-surface layer
  15. Structure modifications in materials irradiated by ultra-short pulses of VUV free electron laser
  16. Synchrotron X-ray Diffraction studies of silicon implanted with high energy Ar ions after thermal annealing
  17. Nanostructure of laser annealed Ge-implanted near-surface Si layers
  18. Defect structure of Sn-implanted Si crystal annealed by nanosecond laser pulse
  19. Twin structure of LSGMO crystals studied by Laue method

Presentation: Oral at IX Krajowe Sympozjum Użytkowników Promieniowania Synchrotronowego, by Wojciech Wierzchowski
See On-line Journal of IX Krajowe Sympozjum Użytkowników Promieniowania Synchrotronowego

Submitted: 2011-06-15 15:04
Revised:   2011-09-13 17:18