Defect structure of Sn-implanted Si crystal annealed by nanosecond laser pulse

Dorota Klinger 1,  Julian Auleytner ,  Danuta Zymierska 1,  Bolesław Kozankiewicz 1,  Elżbieta Lusakowska 1

1. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland

Abstract

A surface layer of disordered structure is created in Si crystal as a result of implantation with ions of a respectively high dose. Different types of defects have been observed depending on the implant species, the implant dose and the annealing temperature [1, 2]. Recently, one takes interest in an influence of the implanted ions mass from group IV: Si, Ge, Sn on the type of structural defects created in the silicon matrix [3-7]. For crystal-lattice reconstruction of the disturbed near-surface layer pulsed laser annealing can be used, as an efficient, fast and well-controlled technique [8]. Laser annealing induces migrations of defects created by implantation process and initiates dopant diffusion.
In the present paper the influence of implanted Sn ions on the defect structure in laser annealed thin near-surface layer is considered. Regions irradiated with different energy densities of the laser beam are compared. A XeCl laser with the pulse duration of 30 ns (FWHM) generates laser light pulses with the wavelength of 308 nm. Evolution of defect structure during nanosecond pulse annealing has been characterized by reflection high-energy electron diffraction, interference polarizing microscopy and atomic force microscopy.

[1] J. L. Benton et al., J. Appl. Phys. 84 (1998) 4749.
[2] J. Wong-Leung et al., J. Appl. Phys. 89 (2001) 2556.
[3] H. Park, M.E. Law, Appl. Phys. Lett. 58 (1999) 732.
[4] M. Uematsu J. Appl. Phys. 83 (1998) 120.
[5] F. Cristiano et al., Nuclear Instrum. Meth. B 147 (1999) 35.
[6] J. Wong-Leung et al., J. Appl. Phys. 88 (2000) 1312.
[7] Jin-Wook Seo et al., Jpn. J. Appl. Phys. 40 (2001) 2150.
[8] S.D. Brotherton et al., IEEE Trans. Electron Devices 40 (1993) 407.

Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: http://science24.com/paper/624 must be provided.

 

Related papers
  1. Impact of substrate microstructure on self-induced nucleation and properties of GaN nanowires grown by plasma-assisted MBE
  2. Influence of substrate on crystallographic quality of AlGaN/GaN HEMT structures grown by MBE
  3. Evaluation of the depth extension of the damages induced by FLASH pulses in silicon crystals
  4. Damage of gallium arsenide created after irradiation by ultra-short VUV laser pulse
  5. Thin films of ZnS and ZnSe by Atomic Layer Deposition for light sensor applications
  6. ZnO thin films for organic/inorganic heterojunctions
  7. Gd atoms on Si (111) surface – AFM and photoemission study
  8. Effect of high pressure annealing on defect structure of GaMnAs
  9. Wide band-gap II-VI semiconductors for optoelectronic applications
  10. Modification of the nanostructure of the amorphised Si near-surface layer
  11. Growth and characterization of thin films of ZnO by Atomic Layer Epitaxy
  12. Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures
  13. Interaction of Mn and Ti atoms with GaN surface - a resonant photoemission study
  14. Structure modifications in materials irradiated by ultra-short pulses of VUV free electron laser
  15. Evidence of threading and misfit dislocations in partially relaxed InGaAs/GaAs heterostructures
  16. X-ray study of quartz single crystals implanted with fast Ar ions
  17. Cathodoluminescence study of n-type doped GaN epilayers and GaN/InGaN quantum well structures
  18. Structure characterisation of MBE-grown ZnSe:Cr layers
  19. Synchrotron X-ray Diffraction studies of silicon implanted with high energy Ar ions after thermal annealing
  20. Gallium nitride surface formation and modification by Mn deposition - photoemission studies with use of synchrotron radiation
  21. X-ray diffractometric study of micro-precipitates created by fast nitrogen ions in GaAs single crystal
  22. Nanostructure of laser annealed Ge-implanted near-surface Si layers

Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Dorota Klinger
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-09 16:44
Revised:   2009-06-08 12:55
Google
 
Web science24.com
© 1998-2022 pielaszek research, all rights reserved Powered by the Conference Engine