Common semiconducting metal oxide thin films include ITO thin films, ATO thin films, and AZO thin films. Recently, increasing research interest on the AZO thin films is not only due to the low resistivity but also the optical characteristics. AZO thin film exhibits a sharp UV cut-off and a high refractive index in the IR range, and is transparent in the visible light. AZO thin films can be deposited by various methods of deposition. However among the methods of deposition, sputtering is a promising technique to grow AZO thin film at lower temperature with better adhesion and higher density. We have recently investigated the effect of annealing on properties of sputtered AZO thin films on glass [1]. In this paper we report high quality AZO thin films could be deposited on unheated polymer substrate by RF sputtering technique. The high quality AZO thin film could be obtained by changing films deposition process parameters such as pressure and RF power. The spurting was carried out in an Ar gas atmosphere with varying RF power ranging from 50 to 300 W. since PET substrates are very temperature sensitive, the deposition was performed at slow rate. The surface morphology and the crystallinity of the films were investigated by X-ray diffractometry and scanning electron microscopy. The thin film AZO deposited on Kapton substrate indicated that thin film deposited with RF power o 280W are strongly c-axis oriented. As well as structural properties, influence of RF power on optical properties of AZO film was investigated. The as grown AZO films deposited with RF powers of 150W exhibited an average transmittance of about 70% in the visible spectra. However, by raising the power of deposition the transmittance of the films decreased to 62%.

1. M.Hoseini, F. Dehghan Nayeri, E.Asl Soleimani, M.R. Ketabdari,& S.Mohajerzadeh, IUMRS-ICEM, Hilton Sydney, Sydney, Australia - 28th July to 1st August 2008

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