Using ZnO Nanostructures is a very attractive in the field of optoelectronics and sensors .growth of ZnO Nanostructures on ZnO film prepared by RF Sputtering is an efficient method in achieving aligned NWs.In the ways that thin films of ZnO(>1000nm that we used)save their piezoelectric properties during the process of NWs synthesis ,we can use these thin films to fabricate ultra sensitive SAW sensors.SEM,XRD,Four-point probe and surface profile measuring system are used to characterization thin films.We chose Si(100)and deposited ZnO on Si by RF Sputtering.We repeated ZnO deposition on oxided Si(100)(with 250 nm dry oxide) .We used this wafers to test nanostructure synthesis conditions in VLS process(temperature and gas flow)on ZnO film. Our VLS process occur in a atmospheric CVD.We have tested both high temperature VLS(using graphite /ZnO mixture and Ar gas flow )and low temperature VLS(using Zn and O2 gas flow).we have noticed that in the ZnO/SiO2/Si samples with increase of temperature the structure of ZnO became worse .they lose their (002)orientation and the grain size became larger. Although their resistances decrease by increasing temperature that can increase power consumption in saw devices. Interestingly in ZnO/Si samples the Nanostructure synthesis condition act as annealing and can improve the structure. On these samples increasing temperature didn’t affect on bulk resistance and increase(002)peak in XRD test.we tested some types of VLS and chemical methods on ZnO thin films and we have showed that, for ZnO/SiO2/Si samples chemical methods and low temperature VLS processes(T~500-600c) like Zinc powder evaporation are better, because in the temperatures above 500c the bulk resistance decrease from 150kohm to 100kohm.In ZnO/Si samples we didn’t see any decrease in bulk resistance at high temperatures and the bulk resistance is about 200kohm. We expected that fabricated ZnO NWs on ZnO/Si samples with suggested methods are suitable for the SAW sensors.

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