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Epitaxial Growth and Band Alignment of (GdxLa1-x)2O3 Films on n-GaAs (001)

Hyung-Ho Park ,  Jun-Kyu Yang ,  Sun Gyu Choi 

Yonsei University, School of Advanced Materials Science and Engineering, Seoul 120-749, Korea, South

Abstract

Herein we demonstrate the epitaxial stabilization of single-crystalline (GdxLa1-x)2O3 films on n-GaAs (001) with a controlled lattice match.  (GdxLa1-x)2O3 films have an in-plane epitaxial relationship with a 2-fold rotation on GaAs (001). Spectroscopic characterization by photoemission and absorption confirms that the band gap of (GdxLa1-x)2O3 film is approximately ~5.8 eV.  However, the conduction band offset is increased by the unpinned Fermi level of the n-GaAs in the (GdxLa1-x)2O3 film (x = 0.97).  The correlation of the crystalline property and the interfacial band offset by the electrical properties, as probed by capacitance and leakage current measurements, is also discussed.   

 

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Related papers

Presentation: Poster at E-MRS Fall Meeting 2007, Symposium J, by Hyung-Ho Park
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-06-25 06:15
Revised:   2009-06-07 00:44