The current crowding effect in GaN-based light emitting diodes (LEDs) is essential in the design of highly efficient devices as well as the extraction of accurate diode quality factors from current–voltage data. In this regard, 3-D computational simulations using the commercial code FEMLAB, which are based on the finite element techniques, were performed to investigate the effects of the current distribution in GaN/InGaN light emitting diodes grown on sapphire substrates. The established 3D model of LED die can be used to show the real situations including plane effects and complex boundary conditions. In this study, the accuracy of numerical results is verified and discussed with previous literatures; a good correlation is obtained between the simulation and experimental result. The relations between current spreading with the geometries of LED structures are also simply discussed.

Keywords: Light emitting diodes (LEDs), Current spreading, Numerical simulation

References:

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