Lateral epitaxy growth onto a patterned sapphire substrate (PSS) has been demonstrated effectively to reduce the threading dislocation densities in GaN layers grown by metal organic chemical vapor deposition (MOCVD) for the fabrication of high-efficiency light-emitting diodes (LEDs). Meanwhile, light extraction efficiency (LEE) is also enhanced due to the scattering effect of patterned structure. The conventional PSS is fabricated by the photolithography and dry etching techniques, however, ion bombardment from the plasma etching generate the damage on the substrate and dry etching is also a cost and time consuming solution. In this study, we adopt wet etching method mixed sulfuric acid and phosphoric acid at high temperature to form 1-D and 2-D patterns with various depths on the substrate. The etching shapes will be naturally determined from the crystallographic facets of sapphire. Based on these etching patterns, we use Monte Carlo ray tracing method to calculate the LEE and also predict the light distribution of PSS LEDs.

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