Jan Czochralski invented his method of pulling a crystal from the melt 90 years ago. In the meantime the “Czochralski method (Cz)” became the most important technique for growing semiconductor and optical crystals from the melt on an industrial scale.

Although, the principle of the Czochralski method looks quite simple, it needs an immense number of sophisticated technical details and process know how to come to the present stage of development for the growth of large size and low defect single crystals – which will be briefly illustrated by some examples of Czochralski-grown semiconductor and optical crystals from industrial production.

Nevertheless, further improvements and developments are necessary to fulfill the future requirements of up-scaling and improvement of crystal quality. Such kind of improvements beyond the present status of the Czochralski technique require a profound analysis of the mechanisms of heat and species transport which are relevant for the stability of the growth process and the performance of the growing crystal. It was clearly demonstrated in the last few years, that modeling by numerical simulation is an indispensable tool to analyze the Czochralski process and help to understand the governing mechanisms.

The contribution will present examples of this kind of modeling the Czochralski technique in correlation with experimental investigations in order to illustrate the present status of understanding relevant processing phenomena. Furthermore, it will be shown what problems need still to be solved in the future in order to further improve the yield and quality of Czochralski -grown crystals.

The presentation is based on results obtained in the author’s laboratory and on actual literature data.

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