The study of strained heterostructures based on III-V semiconductors has attracted much interest due to the possibility of obtaining defect-free quantum dots (QD) by spontaneous self-assembling [1,2]. In particular, In_xGa_1-xAs/GaAs QDs have good optical properties [3-5]. Recently, it has been shown that the photoluminescence (PL) properties of In_0.5Ga_0.5As QDs on GaAs can be improved by growing the dots on high index (n11) substrates [6-9]. Also a clear morphological ordering of (311)B (InGa)As QDs has been observed [10,11].

In this talk I will report a study of the optical and microscopic properties of In_xGa_1-xAs/GaAs heterostructures grown on various high index GaAs surfaces. The substrate orientation strongly affects the two-dimensional to three-dimensional growth mode transition.

References

[1] L. Goldstein et al, Appl. Phys. Lett., 47, No.10, 1985, pp.1099-1101.

[2] C. W. Snyder et, Phys. Rev. Lett., 66, No.23, 1991, pp.3032-3035

[3] J. Oshinowo et al, Appl. Phys. Lett. 65, No. 11, 1994, pp.1421-1423.

[4] K. Kamath et al, Appl. Phys Lett. 71, No. 7, 1997, pp. 927-929.

[5] S. Raymond et al, Phys. Rev. B 54, No. 16, 1996, pp. 11548-11554.

[6] K. Nishi et alJ. Appl. Phys. 80, No. 6, 1996, pp. 3466-3470.

[7] D. I. Lubyshev et alJ. Vac. Sci. Technol. B 14, No. 3, 1996, pp. 2212-2215.

[8] P. O. Vaccaro et al, J. Phys. D: Appl. Phys. 29, No. 9, 1996, 2221-2228.

[9] R. Nötzel, , Semicond. Sci. Technol. 11, No. 10, 1996, pp.1365-1379.

[10] K. Nishi et al, Appl. Phys. Lett. 70, No. 26, 1997, pp. 3579-3581.

[11] M. Kawabe et al, Jpn. J. Appl. Phys. 36, No. 6B, 1997, pp. 4078-4083

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1. Effect of Gamma Irradiation on deep levels detected by DLTS in GaAs_xN_1-x with different Nitrogen concentration