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Positron Depth Profiling in Solid Layers

Robert Grynszpan 

Delegation Generale pour l'Armement, Centre Technique d'Arcueil, Dept. of Defence, 16 bis Ave. prieur de la côte d'or, Arcueil 94114, France

Abstract

We shall start with a brief review of the principles of the Doppler Broadening of the positron annihilation radiation line, the technique most frequently used in defect depth profiling in solids and relevant to dc-beams. We will then focus on some specific examples of Slow Positron Implantation Spectroscopy (SPIS) investigations related to technological applications such as i) the sub-surface damage production by ion implantation in metals or ceramics, ii) the phase transition in tungsten coatings possibly induced by internal stresses, and iii) the dependence on substrate preparation of defect profiles in deposited layers. We will try to elaborate on the possibility of deriving some criteria from SPIS results in order to assess adhesion in metal/polymer or polymer/metal couples.

 

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Presentation: Oral at E-MRS Fall Meeting 2006, Thin-layered materials workshop, by Robert Grynszpan
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-08-07 11:40
Revised:   2009-06-07 00:44