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The Hg1-xCdxTe Epilayers Investigation and Characterization
|Zinoviya F. Tsybriy-Ivasiv , Larysa O. Darchuk , Fedor F. Sizov|
Institute of Semiconductor Physics NAS Ukraine, Kyiv, Ukraine
Most modern IR photodetectors based on Hg1-xCdxTe narrow-gap semiconductors are manufactured from LPE- and MBE-films grown on CdTe and Cd1-yZnyTe substrates. The energy gap of these ternary compounds is a function of the cadmium atomic concentration x. Precise determination of the composition grading is extremely essential for monitoring the material quality and predicting the photoelectrical properties of Hg1-xCdxTe-based infrared detectors.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Zinoviya F. Tsybriy-Ivasiv
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-26 20:20 Revised: 2009-06-08 12:55