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The Hg1-xCdxTe Epilayers Investigation and Characterization

Zinoviya F. Tsybriy-Ivasiv ,  Larysa O. Darchuk ,  Fedor F. Sizov 

Institute of Semiconductor Physics NAS Ukraine, Kyiv, Ukraine


Most modern IR photodetectors based on Hg1-xCdxTe narrow-gap semiconductors are manufactured from LPE- and MBE-films grown on CdTe and Cd1-yZnyTe substrates. The energy gap of these ternary compounds is a function of the cadmium atomic concentration x. Precise determination of the composition grading is extremely essential for monitoring the material quality and predicting the photoelectrical properties of Hg1-xCdxTe-based infrared detectors.
The Hg1-xCdxTe epilayers (12-25 mkm thickness) with different Cd concentrations x, p- and n-type conductivity were investigated. The thickness of the layers was determined, using high-resolution light microscope and interference optical methods. The temperature dependence of the minority carrier lifetime were measured. To determine the value of x, the composition profile x and the calculation of the cutoff wavelength at 80 K were carried out the experimental and theoretical studying of the optical transmission spectra at room temperature by two different methods. In the case of MBE-layers the composition grading is absent, but in LPE-layers case there is non-linear composition grading. This data were confirmed by independent SIMS - measurements of the LPE and MBE films. The photocurrent investigations of the photoresistors prepared on the Hg1-xCdxTe epilayers confirmed that cutoff wavelength corresponds to the composition, measured by the optical methods.


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Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Zinoviya F. Tsybriy-Ivasiv
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-26 20:20
Revised:   2009-06-08 12:55