Metallic nanoclusters embedded in dielectric matrices have attracted a significant research interest because of their uniquely optical and magnetic properties. In this work, we show how the electron field emission (FE) properties of these nanocomposites can potentially form the basis for the next generation vacuum nanoelectronic electron sources. The study of FE of metallic-dielectric nanocomposites is motivated by creating a local field enhancement arising from the isolated conductive clusters embedded in an electrically insulating matrix. Metallic-dielectric nanocomposites, including Ag-SiO₂, Co-SiO₂ and WC-SiC, were synthesised by metal ions implantation onto a dielectric on Si substrates. The WC-SiC nanocomposites fabricated under appropriate conditions show the best FE properties with thresholds field less than 1 V/μm. Moreover, the optimised threshold fields of Ag-SiO₂ and Co-SiO₂ nanocomposites are determined to be 13 and 5 V/μm, respectively and are still comparable to other FE materials. The structural properties of these samples were systematically studied by atomic force microscopy, Rutherford backscattering spectroscopy, x-ray photoelectron spectroscopy, and transmission electron microscopy. The FE properties of these samples are critically dependent on their structure and can be understood by the electrical inhomogeneity and geometric local field enhancement effects. Finally, the details of the dependence of fabrication conditions on the structure and FE mechanisms in these samples will be presented.

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