Electron-beam deposition and sol-gel methods were used to obtain ZnO:X thin films doped with different impurities (X=Al, Ga and Li). Influence of various concentrations of impurities on electric, photoelectric and spectral properties of zinc oxide films has been investigated. The developed technique has allowed to obtain both transparent high conductive and dielectric ZnO films doped by different impurities. Measurements of dark and photoconductivity were carried out in a wide frequency range (0-10¹⁰ Hz). The value of resistivity depends on impurity and is changed from 10^-4 up to 10⁶ Wcm. Photoelectric property studies have shown that with Li doping it is possible to achieve a significant increase of the photoconductivity. The current-voltage characteristics, current-optical power sensitivity and kinetics of rise and decay times of slow and fast components of the photoresponse were studied. It was found that the dark current and photocurrent in Li doped ZnO films have different conductivity mechanisms: hopping mechanism or charge transfer in a Hubbard-model impurity band for dark conductivity current, and drift mechanism of charge transfer in the conduction band for photoconductivity current.

The investigations have shown that ZnO film is perspective material for using as active layer in solid-state UV photodetectors. We studied photoelectric properties of the developed photosensitive field-effect transistor (currents ratio, charge carriers mobility, ampere-watt sensitivity in UV diapason, NEP sensitivity, and photocurrent kinetics). The open and close current ratio was 10⁶ and the field-effect mobility was ~10 cm²/Vsec.

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