Search for content and authors
 

Doped nanostructured materials for electronic applications

Frank Martin Petrat 1Stipan Katusic 2

1. Degussa AG, Creavis Technologies & Innovation, Paul-Baumann-Stra├če 1, Marl 45772, Germany
2. Degussa AG, Hanau, Germany

Abstract

Nanotechnology already plays an important role in our daily life and will form the foundation for revolutionary discoveries and advancements in the decades to come. Nanotechnology will profoundly influence the competitiveness of companies in every important industry. The chemical industry in particular is working on translating the potential of nanotechnology into products.

There are several parameters to improve product performance of nanostructured materials e. g. aggregate structure, primary particle size and surface chemistry. Doping is a common method to influence the properties of bulk semiconductor materials. Doping is a key step in semiconductor industry to introduce traces of impurities in order to align the electronic properties of semiconductors. While doping of bulk materials is well understood there is little known about the properties of doped nanoparticles.

Examples will be given for doped nanoparticles with relevance to electronic and electrochemical applications. Indium tin oxide (ITO) is an important material for photovoltaic application. We present results on indium tin oxide doped with platinum. The morphology of the material as well as its performance in dye sensitized cells (DSC) will be discussed. Another example covers doping of nanoscaled silicon particles. These particles are of special interest in printed electronics as they offer a potential route to formulate semiconducting inks for low cost printed circuits.

 

Legal notice
  • Legal notice:
 

Presentation: Invited oral at E-MRS Fall Meeting 2006, Symposium C, by Frank Martin Petrat
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-05-18 15:30
Revised:   2009-06-07 00:44