Wide-bandgap semiconductors such as GaN, ZnO and 6H-SiC have been widely investigated for their applications to ultraviolet (UV) light emitters and high-power and high-temperature electronics due to their wide-bandgap nature and high breakdown electric fields. Since the first commercial device was realized using GaN, many GaN-based devices have been developed. Recently, however an attention to ZnO is growing rapidly because of its advantages over GaN including availability in bulk and much higher exciton binding energy (60 meV) compared with GaN (24 meV) which guarantees a stability of exictonic emission mechanisms above room temperature.

In this study, the defects in ZnO layers grown by pulsed laser deposition (PLD) were investigated by using capacitance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS) which is the most widely used technique for characterization of defects in semiconductors. The ZnO was grown on a sapphire wafer at room temperature. For the DLTS measurement, Pt was deposited on the surface of the ZnO layer for a Schottky contact and Ti/Au was deposited over the large area of the sample to form an Ohmic contact. On the prepared sample the DLTS measurements were performed at temperature range of 20 K~700 K.

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