Silicon reach oxide (SRO) layers and silicon nano-crystals nc-Si have been gaining particular attention for their optoelectronic properties. Lasers and electro-optical modulators are interesting examples of their promising applications. State of art of complementary analytical techniques, with an accurate and precise characterization methodology, are recognized as a keystone to correlate the growth process of these materials and their optoelectronic properties. Photo-electron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) have been focused in this work as helpful ways to obtain the required characterization of these materials. XPS and SIMS combine the chemical physical analytical techniques requested to provide quantitative and accurate results. The SIMS quantification of elements in silicon reach oxide with variable concentration of oxygen, silicon and nitrogen is not trivial. Besides the high precision of SIMS profiles, performed by a Cameca SC-Ultra apparatus, the accuracy of the data in SRO is a difficult task, because of different matrices. In fact the ratio between SiH₄, N₂O and NH₃ was varied during SRO deposition by PECVD. A fit equation for silicon SIMS depth profiles quantification in SRO is proposed. The physic-chemical data provided by the developed methodology have been related to electro-optical properties of SRO layers, characterized by electroluminescence (EL) emission. The opportunity of a cyclic feedback from the growth parameters to the electro-optical properties, passing through the materials characterization by XPS and SIMS is highlighted. Furthermore an original approach for the determination of structural properties of silicon nano-crystals by atomic force microscopy (AFM) has been investigated.

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