Highly Ordered Mesoporous Silicon Carbide - a New High Temperature Stable Catalyst Support

Piotr Krawiec ,  Emanuel Kockrick ,  Stefan Kaskel 

Dresden University of Technology, Institute for Inorganic Chemistry, Mommsen str. 6, Dresden 01062, Germany

Abstract

Ordered mesoporous materials which were first discovered in 1992 are promising catalysts and catalysts supports.[1] They posess high surface areas (up to 1400m2g-1) and precisely defined pore structure (diamater and 3D arrangement). Here we present how a new high surface area hexagonally ordered mesoporous silicon carbide (SiC) supports are prepared via nanocasting of the ordered mesoporous silica.[2-4] Chemical vapor deposition from simple silanes,[2,3] autogenic pressure reactions[3] and polymer precursors infilitration[4] were used to prepare SiC materials with highest surface areas reported untill now (up to 830 m2g-1) and ordered mesopore structure. Moreover these materials are thermally stable up to 1300oC and have high thermal conductivity. These properties of SiC supports makes them especially interesting in reactions where hot-spot formation is to be avoided and high temperature stability of support is required.[5]

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[1] Taguchi A., Schuth F., Microporous Mesoporous Mater. 2005, 77, 1

[2] Krawiec P., Weidenthaler C., Kaskel S. Chem. Mater. 2004, 16, 2869

[3] Krawiec P., Kaskel S., J. Solid State Chem. 2006, 179, 2281

[4] Krawiec P., Geiger D., Kaskel S. Chem.Commun. 2006, 23, 2469

[5] Ledoux M.J., Pham-Huu C. Cattech. 2001, 5, 226

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Presentation: Oral at E-MRS Fall Meeting 2006, Symposium B, by Piotr Krawiec
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-05-15 11:50
Revised:   2009-06-07 00:44
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