Since the MOSFET gate lengths scale down to 50 nm and below, it appears 2 major problems: the first one is the increase of leakage current and the second one is the polysilicon gate electrode depletion induces an additional capacitance [1]. To solve the first issue high-k dielectric maybe a solution since for the same electrical thickness. To solve the problem of depletion (valid for the semiconductors) the solution is containly the use metal gate. In this study, we will use Tantalum carbide (Ta_xC_y). Ta_xC_y [2] electrode is a ve metal candidate. In this work, the influence of the sputtering conditions was studied in order to optimise the value of work function.

Ta_xC_y films were prepared by Ion Beam Sputtering with a tantalum target and a mixture of argon and methane. The material is tantalum carbide Ta_xC_y of 10 nm thickness deposited on dielectric gate. All the samples are deposited at room temperature. The physicochemical characterizations used for Ta_xC_y alloys are: X-rays difraction, SIMS, RBS and XRR.A relation between the carbon rate, the phase of Ta_xC_y formed and the work function was established.

[1] S.E. Thompson, R.S. Chau, T. Ghani et al., IEEE Transactions for Semiconductor Manufacturing, Vol.18, n°.1, pp. 26-36, 2005.

[2] J.K. Schaeffer et al; 2004-International-Electron-Dispositifs-Meeting-IEEE - 2005: 287-90

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