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Photoluminescence from ZnO films prepared by wire explosion technique
|Valentinas Snitka 1, Vytenis Jankauskas 2, Vida Mizariene 1, Gediminas Seniunas 1|
1. Kaunas University of Technology, Research Center for Microsystems and Nanotechnology (RCMN KTU), Studentu 65 - 203, Kaunas 3031, Lithuania
ZnO films deposited on glass, quartz and Al on silicon mono-crystal Si (100) substrates by using the wire explosion technique were investigated by X-ray diffraction (XRD), UV-VIS spectroscopy, scanning electron (SEM) and atomic force microscopy (AFM) measurements. X-ray diffraction measurements have shown that ZnO films are mainly composed of (100), (002), (101) orientation crystallites. The post-deposition thermal treatment at 600 oC temperature in air have shown that the composite of Zn/ZnO film was fully oxidized to ZnO film. XRD spectra of the film deposited in oxygen atmosphere at room temperature presents high intensity dominating peak at 2h=36,32o corresponding to the (101) ZnO diffraction peak. The small fraction of the film (7 %) correspond to (002) peak intensity at 2h=34,42o. This result indicates the good crystal quality of the film and hexagonal wurtzite-type structure deposited by zinc wire explosion. The SEM analysis shows that ZnO films presented different morphologies from fractal network to porous films depending on deposition conditions. AFM analysis revealed the grain size range from 50 nm to 500 nm. The nanoneedles up to 300 nm length were found as typical structures in the film. The optical properties of the deposited ZnO nanostructures were investigated by Scanning Near Field Optical Microscopy and UV-VIS spectroscopy and revealed at room temperature a green photoluminescence band. The optical absorbtion spectra shows the bands at 374, 373, 371 nm corresponding to deposition conditions.
Presentation: Poster at E-MRS Fall Meeting 2006, Symposium F, by Valentinas Snitka
See On-line Journal of E-MRS Fall Meeting 2006
Submitted: 2006-05-14 16:48 Revised: 2009-06-07 00:44