Zinc oxide has many device applications in electronics, so the study of processes responsible for its parameter instability is an actual task. In this work, the influence of light irradiation on ZnO characteristics was studied. Nominally undoped ZnO single crystals with ρ = 10-30 Ω·cm were investigated. Photoconductivity and exciton luminescence (ExL) spectra were measured at 300 and 77K before and after sample irradiation with focused light of xenon lamp at 300-700K. After the irradiation, considerable reduction of photosensitivity and the change of ExL spectrum shape were found to occur. Simultaneously, the decrease of dark conductivity was observed. The initial characteristics were restored with time in dark. Observed effects were shown to result from rearrangement of highly conductive layer on ZnO crystal surface. The origin of this layer and the mechanism of its rearrangement were recently published [1].

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1. Structural and luminescent properties of ZnO thin films doped with Cu, Ga, Ag
2. Modification of the photoluminescence characteristics of CdZnTe/ZnTe QWs by CdTe monolayer film insertion