Spin-polarized Scanning Tunneling Microscopy (SP-STM) and Spectroscopy (SP-STS) allow the visualization of atomic-scale spin structures and the investigation of the spin-dependent local density of states spatially resolved. Spin-dependent scattering at single atomic impurities was visualized in real-space reflecting the orbital nature of the electronic states involved as well as their spin character. Ferromagnetic semiconductors like InMnAs receive a great amount of interest as the pivotal material for future spintronic devices. Recent experiments using STM suggest that the anisotropic shape of the acceptor wave function might affect the interaction of the magnetic dopants. We performed STS on Mn-doped InAs at low temperatures and found an anisotropic, cross-like shape of the Mn, which fits nicely to the Mn-acceptor wave function as calculated with the tight binding method. In contrast to the GaAs-case, Mn appears as a cross-like protrusion in the occupied density-of-states (DOS) and as a cross-like depression in the unoccupied DOS. To extend the possibility of atomic-scale spin mapping to insulating material systems we have recently succeeded in establishing magnetic exchange force microscopy (MExFM) as a reliable and reproducible technique.

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