Generally, the interdiffusion processes between the ferromagnetic metals and the semiconductors take place during the interfaces formation and semiconductor atoms are released into the metallic layers and/or on the films surface. Using X and UV photoelectron spectroscopy as well as high energy electron and photoelectron diffraction we have studied and compared the growth of iron films at room temperature on GaAs(001)-(2x4) and Al_0.52In_0.48As(001)-(2x4) surfaces. Our results suggest that the same reaction mechanisms are implied during the interface formation for the two systems. There is an interdiffusion between the Fe and the semiconductors, and the interfaces are formed for coverage higher than 0.8 nm Fe. Our quantitative measurements demonstrate that a Fe solid solution is formed with 20-30 % of foreign atoms in the vicinity of the interfaces (~ 5 atomic planes). For the ultrathin films (0.5-2 nm) the two systems show a dominant in plane uniaxial magnetic anisotropy (with an easy axis along the [110] substrate direction) which is due to the anisotropic chemical bonding at the Fe/semiconductor (001) interface. Despite the reaction processes, the Fe/GaAs interface is rather sharp and the magnetic moment of Fe atoms at the interface is close to that of the bulk.

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1. Magnetic anisotropy of ultrathin layers grown by electrochemistry on Au(111)