Optical measurements require optical sensors, transport measurements
require electrical sensors. We found that layered semiconductors can
serve each of these purposes. Quantum well structures based on InP are
superior to ruby in the 10 GPa pressure range. InGaAs/GaAs wells can
be used up to 5 GPa. Nitride semiconductors should work in a much
higher range but the quality of their heterostructures is not as good
as for other III-V materials.
Piezoresistive semiconductor sensors are superior to manganin in the 3
GPa range and the temperature effects can be reduced by adjusting
composition or doping profile. This will be demonstrated for AlGaAs
and AlGaInP epitaxial layers. The behaviour of these sensors will be
compared to the properties of InSb bulk crystals commonly used for
pressure calibration in liquid cells.

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