Nanostructured composite optoelectronic devices based on quantum dots (QD's) of an IV-VI semiconductors are very interesting for various applications. The nucleation and growth of PbTe QD's from vapor phase on BaF₂ (111) substrates strained by an extern load under conditions close to thermodynamic equilibrium have been studied by using atomic force microscopy. The size distribution of the QD's was statistically analyzed as dependent on the character of straining of the substrate. The PbTe dots were grown epitaxially under Volmer-Weber growth mode. The maximum values of density of self-assembled QD's grown on the unstrained BaF₂ (111) substrates did not exceed (6 ÷ 8)∙10¹⁰ sm^-2. The size distribution of this dots is quite broad (standard deviation ~ 20%-50%). Ultradence (above 10¹¹ sm^-2) arrays of faceted PbTe QD's with a average height ~ 3,5 nm (8% - 9% std) are obtained on strained BaF₂ (111) substrates under conditions of small vapor supersaturation in the condensation zone. Its uniformity and high QD's density is based on the formation of self-assembled QD's on the bent (stretched) BaF₂ (111) surface, where the effect of localization of the plastic deformation was observed on the nanometer length scale. This is due to the self-organization of the dynamic dissipative system of an interacting dislocations in a certain range of temperatures and stresses. We find that a lateral periodicity along the direction <110> amounts to 300 Å due to the heterogeneous nucleation of QD's at straight surface slip steps and anisotropic surface migration of the adsorbed PbTe molecules. The influence of straining on the kinetic processes on the substrate surface was investigated.

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