Incorporation of Si-nc in Er doped silica is known to strongly enhance the infrared luminescence of Er³⁺ at 1.54um. The enhancement is believed to be due to an energy transfer process from Si-nc to Er. In this work we investigate the formation of Si nano-aggregates and their role in the energy transfer process to Er³⁺ ions for a multi-component glass host. These materials can offer better performances than silica in terms of Er solubility and band broadness for integrated Er-doped optical amplifiers and their study is therefore very interesting for optoelectronic applications. The precipitation of Si and the enhancement of the 1.54um Er emission were studied for different post-implantation annealing temperatures. In particular the optical properties of the glass were investigated by means of photoluminescence (PL) spectroscopy and PL decay dynamics and the results were compared with those of a reference silica substrate treated at the best performing annealing conditions for that material in terms of enhancement of the Er emission. These data are presented and related to the structural properties of the material. Moreover the implications of these results on the future development of an Er doped optical amplifier will be discussed.

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