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Auger Electron Spectroscopy studies of the microstructure and diffusion processes at interfaces of multilayer platings used in laser diode technology

Valentina V. Arbenina 1R H. Akchurin 1A A. Marmalyuk 2O I. Govorkov 3

1. Moscow State Academy of Fine Chemical Tecnology by M. V. Lomonosov, Vernadskogo pr., 86, Moscow 119571, Russian Federation
2. OOO "Sigm Plus", Moscow, Russian Federation
3. FGUP "NII Polus", Moscow, Russian Federation


In modern technology of the laser diode fabrication, based on heterostructures AlGaAs/GaAs, metallic multilayer plating for contact platform is used. Each of formed layers with the thickness of the order 500-1000 A executes the certain function.
It is important to know the microstructure of the thin layers of plating and phase composition on boundaries for choice contacting metals, and to estimate correlation of the thicknesses of the layers, as well as condition of their fabrication.
Formation of the microstructure of metallic layers is accompanied by the development of the internal tensions. The diffusion processes on boundaries in AlGaAs/GaAs/Ti/Pt/Au and AlGaAs/GaAs/Ti/Pt/Ti/Au systems were studied using Auger Electron Spectroscopy (AES) and Electron Imaging Microscopy (EIM).
High-resolution grazing-sputter-angle AES was also used for concentration depth profile investigation.
A broadening and shift of the peaks in Auger-spectra of the surface after etching, allows to conclude about chemical bond between elements and possible phases of the intermediate composition, which are formed as a result of "reactive" diffusions on Ti/Au, Ti/Pt interfaces during the deposition and impulse annealing of contact .


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Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Valentina V. Arbenina
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-11 12:50
Revised:   2009-06-08 12:55