Gadolinium silicide films were grown in ultrahigh vacuum(UHV) on a Si(111) substrate through an interfacial SiO₂ layer. In order to examine the role of an interfacial SiO₂ layer during the silicide formation, we used in-situ reflection of high energy electron diffraction, x-ray diffraction, x-ray photoelectron spectroscopy, and high resolution transmission electron microscopy. The structural transformation was observed from the initial GdSi_1.7 hexagonal phase to GdSi₂ orthorombic phase as the post-annealing temperature increase. Our experimental results implied that an interfacial SiO₂ layer decomposed and the reaction between Gd and Si was enhanced. We conclude that the competitive reaction among Gd, Si, and its oxides determine the reaction pathway in gadolinium silicide formation.

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