The elaboration of metallic three dimensions (3D) structures with dimensions in the micro or nanometer range presents substantial interest in numerous research fields. From device applications point of view, the fabrication of patterned 3D structures with quantum properties is an attractive technological challenge for electronic or optoelectronic for instance. Unfortunately, it remains difficult to obtain such devices without several fabrication processing steps.
This study presents the growth and characterization of original metallic gallium 3D structures, obtained with a single growth step, by the LP-MOCVD technique on various substrates. Commercial organometallic is used for gallium precursor with nitrogen like carrier gas. The growth temperature and the reactor pressure are ranking between 400 and 700 C, and between 150 and 700 torr, respectively.
Depending on the elaboration conditions, different 3D structures are obtained such as droplets, cauliflowers, big compact piles or thin stems, with micrometer sizes. Moreover, selective growth is also observed on patterned substrates, depending on the substrate chemical composition. The morphologies, substrate surface densities and thermal stability are studied by optical microscopy and scanning electron microscopy. At last, X-ray microanalysis and X-ray diffraction are carried out in order to determine the elemental composition and the crystallographic structure of these 3D objects.

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