As superhard material cubic boron nitride (cBN) has been widely used in industrial application Its usage as wide bandgap semiconductor is extremely being held back by the lack of basic knowledge of its properties. A wide band gap of 6.4 eV of cubic boron nitride (cBN) has made the material to be very attractive for its application in semiconductor and optical devices. As closest analogues of diamond cBN suppresses the latter in band gap, thermal, electrical and radioactive resistance , in possibility to emit secondary electrons. It can be easily transformed in n- and p-type and has a high electrical breakdown strength making a promising material for high-power transistor application. The most promising application of cBN is the use as field emitting device. Current applications are primarily based on silicon technology and operable up to 2000C only.CBN seems to be the only one that could cover the most demanding application range beyond 6000C. CBN has been considered as a model material for A3B5 group compounds at last. The real synthesis achievements under high pressure/high temperatures conditions of p- and n-type cBN doped by appropriate impurities have showed promising prospects for practical application and fabrication of p-n junction and ultraviolet light emitting diodes based on the material were realized. The perfect technology of n- and p-type cBN single crystals (or films) fabrication is very important for cBN application as semiconductor. No less than important is a development of different control methods of impurities and intrinsic defects in the material. In present work new dates are reviewed about recent photoluminescence (PhL) investigations of cBN single crystals irradiated by low energy electrons and doped by successful acceptor. PhL spectra of the near-threshold irradiated cBN ( radiation damage centres RC1-RC4 and PF center) are analyzed in details. New fundamental characteristics of cBN are delivered

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1. Luminescence and EPR analysis in investigations of cubic boron nitride