Germanium sulphide (GeS) and tin diselenide (SnSe₂) present anisotropic properties due to their layered crystal structures. In fact, these crystals are composed of atomic layers interacting with each other only by van der Waals forces. Recently these materials have been used to prepare new diluted magnetic semiconductors (DMS) by substituting some of Ge or Sn atoms by manganese in crystal lattices forming Ge_1-xMn_xS and Sn_1-xMn_xSe₂. Aiming at a comparison of Mn atoms behaviour with the layered crystal, Mn/GeS and Mn/SnSe₂ thin films have been grown and investigated by X-ray and synchrotron radiation induced photoelectron spectroscopies. We present here XPS investigations of in situ grown Mn/SnSe₂ for coverages ranging from sub-monolayer to thin films that show interesting behaviour from the structural as well as from the reactivity points of view. Meausrements in fact suggest that a Mn-Sn alloy is formed at the interface and that Mn atoms first deposit following an atomic netting pattern due to the particular structure of SnSe₂ (001) face.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/495 must be provided.