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Regularities of elastically anisotropy deformed mechanism of T-H-P influence on the phase transition and properties change in magnetic semiconductors

Piter I. Polyakov ,  Stanislav S. Kucherenko 

National Academy of Sciences of Ukraine, Donetsk Technical-Physical Institute, R. Luxemburg 72, Donetsk 83114, Ukraine

Abstract

The main aim of this paper is development of new conceptions about the general theory of structure phase transitions, phase diagrams, properties and effects in magnetic semiconductors.
An analysis of change of resistivity, magnetostrition, phase transitions of magnetic semiconductors: polycristalline La0.7Mn1.3O3 and monocrystalline LaMnO3 under influence of temperature (T), magnetic field (H) and hydrostatic pressure (P) was carried out. The revealed magneto-, baro- and baromagnetoresistive effects have shown the same temperature TPP of their peaks which coincides with the temperature Tms of structural phase transition 'metal-semiconductor' and the discovered 'cooling' and 'heating' effects allow us to substantiate the linear shifting of Tms(H), Tms(P) and Hg(T) [1]. A correspondence in the influence of T-H-P (8 K~2.12 kOe~1 kbar) on resistive properties, and T-H (5.2 K~2.5 kOe) on magnetostrictive properties has been established. Sign alternation change in properties, effects and priorities of the competing influence of thermo-, baro- and magnetoelastic anisotropically deforming (EAD) strictions has been fixed. Positions of critical lines Tms(H), Tms(P), Hg(T) and critical points TX, PX, PPX, PX', TPP=Tms, TC have been determined (fig.1). Correspondence on resistivity and magnetostriction behaviours is shown [1].
Reference
[1] P.I. Polyakov, S.S. Kucherenko, JMMM 248, ?3, pp.396-401 (2002); Pisma v Zhurn. Teh. Fiz. 28, p.8 (2002); Fiz. Nizk. Temp. 28, ?10, pp.1041-1047 (2002).

 

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Presentation: poster at E-MRS Fall Meeting 2003, Symposium D, by Stanislav S. Kucherenko
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-04-16 13:57
Revised:   2009-06-08 12:55