Recent advances in magnetoelectronic devices are discussed including read heads, non volatile memories and sensors. For read heads, low RA AlOx and MgO barriers are compared, and junction structure discussed. High frequency (GHz) noise characteristics are discussed. Alternative CPP spin valve stacks are reviewed, in particular structures with current confined paths. For memory applications, thermally assisted MRAMS and spin transfer driven MRAM are discussed. Particular MTJ stacks used in both applications are reviewed. Finally, for sensor applications, it is shown that with new MgO barriers, highly sensitive field detectors can be fabricated with noise levels reaching 10-11 T/sqr(Hz).

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