We fabricated a p-n junction of p(beta FeSi₂)-n(Si), so called "environmental semiconductor". Large MR of 30% in 30T at RT was obtained for a well fabricated sample. We found the optimum annealing condition of the p-n junction for the largest MR was at T=840^oC, 2 hours for the deposited Fe on n-Si. Magneto-photo-transistor will be obtainable by the device in the future.

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1. Field induced spin transitions and large magnetoresistance in the quasi-one-dimensional magnet Ca₃Co₂O₆