Transport of spin-polarized electrons in a ferromagnetic single-electron transistor (FM SET) is analyzed theoretically in the sequential tunneling regime [1]. Two external electrodes and the central part (island) of the device under consideration are ferromagnetic, with the corresponding magnetizations being generally non-collinear. The regimes of fast and slow spin relaxations on the island are considered. Transport characteristics like conductance, tunnel magnetoresistance (TMR), and differential conductance have been calculated for different values of the bias and gate voltages. It is shown that the transport characteristics vary significantly with the angle between magnetizations [2]. We have also calculated torque due to spin transfer from conduction electrons to localized magnetic moments. The torque is calculated from the spin current absorbed by the island [3].

[1] Single Charge Tunneling, Vol. 294 of NATO Advanced Study Institute, Series B, edited by H. Grabert and M. H. Devoret (Plenum Press, New York, 1992).
[2] J. Wiśniewska, I. Weymann and J. Barnaś, Materials Science (Poland) 22, 461 (2004), and references therein.
[3] J. Barnaś, A. Fert, M. Gmitra, I. Weymann and V. Dugaev, cond-mat/0501570

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