CHARACTERISATION OF POLYCRISTALLINE CuIn1-xGaxTe2 BULK FILMS

L. BECHIRI1, M. BENABDESLEM1, N. BENSLIM1, L. MAHDJOUBI1, R. MADELON2,
J.L. DOUALAN3 and G. NOUET4

1Laboratoire des Cristaux et des Couches Minces, Institut de Physique, Université de Annaba, BP. 12, 23200 Sidi Amar (Algérie). Fax: (00213 38-87-17-12). E-mail: [email protected]
2LERMAT, FRE 2149 CNRS, Institut des Sciences de la Matière et du Rayonnement ISMRA, 6 Boulevard du Maréchal Juin, 14050 Caen cedex (France)
3CYRIL, Institut des Sciences de la Matière et du Rayonnement ISMRA, 6 Boulevard du Maréchal Juin, 14050 Caen cedex (France)
4ESCTM - Laboratoire de Cristallographie des Matériaux, UMR 6508 CNRS, Institut des Sciences de la Matière et du Rayonnement, 6 Boulevard du Maréchal Juin, 14050 Caen cedex (France) Phone: 33 2 31 45 26 47, Fax: 33 2 31 45 26 60


ABSTRACT: Polycristalline CuIn1-xGaxTe2 bulk films were synthesized by reacting, in stochiometric proportions, high purity Cu, In, Ga and Te in vacuum sealed quartz ampoule. The surface morphology, phase structure and composition of the bulk films were analyzed by scanning electron microscopy, X-ray diffraction and energy-dispersive X-ray analysis, respectively. Photoluminescence spectra were measured at temperatures from 7 to 200 K to characterize defects and the structural quality. The main peak as function of composition has been studied and a tentative assignement of defects to the peaks observed is provided.
Keywords: CuIn1-xGaxTe2 alloys– 1: Structure – 2: Photoluminescence – 3

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