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Structure Changes Caused by the Stress Gradient in Subsurface Layers of Germanium Single Crystals

Igor Zhikharev 

Slovjansk State Teacher-Training Institute, Gen.Batjuk St 19, Slovjansk 84116, Ukraine

Abstract


STRUCTURE CHANGES CAUSED BY THE STRESS GRADIENT IN SUBSURFACE LAYERS
OF GERMANIUM SINGLE CRYSTALS
V. Nadtochy, I. Zhikharev, M. Golodenko, M. Nechvolod
Slovjansk State Teacher-Training Institute, 19, Gen.Batjuk St., 84116
Slovjansk, Ukraine
Andrzej Misiuk
Institute of Electron Technology, Al. Lotnikov 32/46, 02-668 Warsaw,
Poland
Czochralski-grown n-type germanium single crystals with resistivity
45 [ [image002.gif] ]were investigated. The samples were cut in a form
of rectangular prism of 4´4.5´10 mm dimension oriented respectively in
the directions [[image004.gif] ], [[image006.gif] ] and
[[image008.gif] ]. Three batches of single crystals, five samples in
each, where chosen for deforming in cycles of pressing and unloading
up to [[image010.gif] ] along the direction [[image011.gif] ]. The
samples of the first batch were cyclically pressed at 600 K, the
samples of the second batch at 300 K and the samples of the third
batch also at 300 K but simultaneously they where irradiated during
24 h with 5 W ultrasound.
After several deformation cycles at 300 K the effect of deformation
becomes apparent in forming of clusters in subsurface layers. Cyclic
deformation accompanied by simultaneous ultrasound irradiation
intensifies migration of the point defects. "Discs", formed by the
point defects in the environment of the precipitates, and tracks of
the defects, migrating from side edges to the middles of the side
surfaces, can be seen on the side surfaces.. These results are
confirmed indirectly by the electric measurement of the lifetime of
the injected charge carriers. Changes in the width of the X-ray
diffraction maximum observed on the deformed samples also confirm our
conclusion.

 

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Presentation: poster at E-MRS Fall Meeting 2002, by Igor Zhikharev
See On-line Journal of E-MRS Fall Meeting 2002

Submitted: 2003-02-16 17:33
Revised:   2009-06-08 12:55