Abstract:  Because of the narrow growing window for 4H-SiC crystals, 15R, 6H and other polytypes are easily formed in when growing semi-insulating 4H-SiC crystals. In this work, a stability polytype controlling technology was obtained by changing parameters: Growing Temperature, shape of Temperature field and C/Si ratio. A 3inch semi-insulating 4H-SiC crystal was growth using vanadium doping. Several methods for the evaluation of material properties were applied to determine the crystal quality more precisely: Raman mapping, X-ray diffraction, resistivity mapping and Atom force microscopy. The results showed that the whole 3inch-wafer was 100% 4H polytype, Mean value of FWHM was 40 arcsec., and the resistivity was between 10¹⁰Ω•cm and 10¹¹Ω•cm.

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