Acronym: FMRSM

Project no.: NCBiR/ERA-NET-MATERA/3/2009

Duration: April  29th, 2009 – February 28th, 2012

Consortium:

• Research Centre (FZ) Jülich, Germany
• Institute of Solid State Physics (ISSP) at the  University of Latvia in Riga (Latvia)
• Faculty of Mathematics, Physics and Chemistry, A. Chełkowski Institute of  Physics, University of Silesia in Katowice

 Project Coordinator: Research Centre (FZ) Jülich, Germany

 Objective and methods

The aim of the project was to develop the basic science and technology for future resistive switching memories based on new functional ternary oxides. Since extended defects as dislocations or defect clusters with nanoscale dimensions are considered to be the single resistive switching units in doped ABO₃-perovskites, one has to gain deeper understanding of the complex correlation between defect structure, elementary and defect distribution and switching properties.

The project was carried out by an international research team consisting of three partners from different countries that are members of the consortium ERA NET Matera - Research Centre (FZ) Jülich, Germany, Institute of Solid State Physics (Institute of Solid State Physics-ISSP) at the University of Latvia in Riga (Latvia) and the Faculty of Mathematics, Physics and Chemistry, University of Silesia in Katowice. Polish part of the project was carried out by a team from the Institute of Physics, University of Silesia. The studied materials were in the form of epitaxial thin films of SrTiO3 doped with iron and manganese. The samples were grown in the Research Centre Jülich with the use of PLD method.

Results

Thin films of SrTiO3 doped with up to 5% iron in place of titanium have shown interesting properties of resistive switching as compared to the undoped films. This suggests that they may be used in a new type of non-volatile memory. The studies of the Polish part of the project were concentrated on detailed characterization of the electronic structure. High resolution photoelectron spectroscopy, resonant photoemission and x-ray absorption methods were applied. Our results showed the dopant contribution to the electronic states of the valence band including the energy gap. These electronic states can be related to the increased electrical conductivity within the filaments – the basic elements of the resistive switching phenomenon in SrTiO₃ based materials. The studies performed with the use of synchrotron radiation demonstrated that iron ions are in two oxidation states 2+ and 3+, and enabled determination of a partial density of states originating from iron dopant. Similar data were collected for Mn doping. It was shown that doping with manganese leads to worse switching properties in comparison to iron.

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